Topographic characterization of AFM-grown SiO2 on si
作者： X Blasco , D Hill , M Porti , M Nafría , X Aymerich
DOI: 10.1088/0957-4484/12/2/307
关键词: Nanotechnology 、 Nanoelectronics 、 Surface finish 、 Dielectric 、 Silicon 、 Materials science 、 Characterization (materials science) 、 Gate oxide 、 Fabrication 、 Etching
摘要: In order to establish whether atomic force microscope (AFM) grown SiO2 is appropriate for use as a gate oxide in nanoelectronics, characterization of these films needs be performed. this paper results on AFM fabrication and topographical large-area patterns are presented. This centred around the surface SiO2-Si interface roughness, due its importance relation quality ultrathin dielectrics. Our show quite similar values those obtained thermal oxides thus we suggest that AFM-grown suitable candidate applications nanodevices.
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