Synthesis and Application of Monolayer Semiconductors (June 2015)

作者: Kuan-Chang Chiu , Xin-Quan Zhang , Xiaoze Liu , Vinod M. Menon , Yung-Fu Chen

DOI: 10.1109/JQE.2015.2476360

关键词: SemiconductorMonolayerNanotechnologyFundamental physicsNanoelectronicsMaterials scienceElectronic circuitAnnealing (metallurgy)GrapheneAtomic layer deposition

摘要: Recently, semiconducting monolayers, such as MoS2 and WSe2, have been highlighted for their spin-valley coupling, diverse band structures, bendability, excellent optoelectronic performances. With a subnanometer thickness of atomic layers, the transition metal dichalcogenides (TMDc) layers demonstrate significant photoresponse, considerable absorption to incident sunlight favorable transport performances, leading applications in electronic circuit requiring low stand-by power, devices, next-generation nanoelectronics. Therefore, class monolayer TMDc offers burgeoning field materials science, fundamental physics, optoelectronics. A feasible synthetic process realize controlled synthesis large area high quality monolayers is demands. In this review, we will introduce progress on layers.

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