作者: Kuan-Chang Chiu , Xin-Quan Zhang , Xiaoze Liu , Vinod M. Menon , Yung-Fu Chen
关键词: Semiconductor 、 Monolayer 、 Nanotechnology 、 Fundamental physics 、 Nanoelectronics 、 Materials science 、 Electronic circuit 、 Annealing (metallurgy) 、 Graphene 、 Atomic layer deposition
摘要: Recently, semiconducting monolayers, such as MoS2 and WSe2, have been highlighted for their spin-valley coupling, diverse band structures, bendability, excellent optoelectronic performances. With a subnanometer thickness of atomic layers, the transition metal dichalcogenides (TMDc) layers demonstrate significant photoresponse, considerable absorption to incident sunlight favorable transport performances, leading applications in electronic circuit requiring low stand-by power, devices, next-generation nanoelectronics. Therefore, class monolayer TMDc offers burgeoning field materials science, fundamental physics, optoelectronics. A feasible synthetic process realize controlled synthesis large area high quality monolayers is demands. In this review, we will introduce progress on layers.