Mechanically modulated tunneling resistance in monolayer MoS2
作者： Tsu Jae King Liu , Jian Zhou , Sefaattin Tongay , Junqiao Wu , Junqiao Wu
DOI: 10.1063/1.4827301
关键词: Monolayer 、 Scanning tunneling spectroscopy 、 Orders of magnitude (data) 、 Optoelectronics 、 Electrode 、 Analytical chemistry 、 Electrochemical scanning tunneling microscope 、 Conductive atomic force microscopy 、 Quantum tunnelling 、 Active layer 、 Chemistry
摘要: We report on the modulation of tunneling resistance in MoS2 monolayers using a conductive atomic force microscope (AFM). The between AFM probe and bottom electrode separated by monolayer is reversibly reduced up to 4 orders magnitude, which attributed enhanced quantum when compressed tip force. Under Wentzel-Kramers-Brillouim approximation, experimental data are quantitatively explained metal-insulator-metal diode model. As an ideal medium, defect-free, nanometer-thick can serve as active layer for non-impacting nano-electro-mechanical switches.
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