Method of grinding rear side of semiconductor wafer

摘要: A method of grinding the rear side a semiconductor wafer, front which has bumps formed thereon, includes steps of: preparing wafers whose surfaces have plurality circuits in their lattice patterns; coating selected wafer with resist material to form layer thereon; forming holes each section at are be corresponding by removing resist; plating metal bumps; putting on chuck table layer, is its side, laid machine; and wafer. The lower than thickness therefore, they short reaching surface can protected from cracking, otherwise would caused concentration stress while thereof.