Silicon wafer thinning end point method
作者： Steven R. Codding , Edmund J. Sprogis , Timothy C. Krywanczyk
DOI:
关键词:
摘要: Disclosed are a method of and system for fabricating semiconductor wafer. The comprises the steps providing silicon wafer having front side an back side, building integrated circuit on wafer, thereafter removing substrate from step includes forming desired structure in end said extending to greater depth, toward than structure. Also, only structure, whereby no part is removed during step.
lens.org 参考文章(19)
Gurtej S. Sandhu, Chris C. Yu, Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection ,(1991)
Eric Gerhard Liniger, Ronald Lee Mendelson, Robert Francis Cook, John M. Blondin, Donald W. Brouillette, David Frederick Diefenderfer, Method and apparatus for preventing chip breakage during semiconductor manufacturing using wafer grinding striation information ,(1998)
Thomas A. Walsh, Salman Moudrek Kassir, Grinding apparatus and method ,(2006)
Zhifeng Sui, Paul E Luscher, Nils Johansson, Michael D Welch, Endpoint detection in substrate fabrication processes ,(2002)
Michael D. Rostoker, Detecting the endpoint of chem-mech polishing, and resulting semiconductor device ,(1992)
Kazuhisa Arai, Method of grinding rear side of semiconductor wafer ,(2002)
Steven A. Henck, Stephanie W. Butler, Sonny Maung, Method and apparatus for process endpoint prediction based on actual thickness measurements ,(1993)
Michael Wisnieski, Michael Vogtmann, Krishna Vepa, Eccentric abrasive wheel for wafer processing ,(2001)
David B. Gonzales, Aaron T. Bartlett, Endpoint stabilization for polishing process ,(2001)
Thomas G. Ference, Ronald L. Mendelson, Donald W. Brouillette, Michael S. Hibbs, Harold G. Linde, Wafer thickness control during backside grind ,(2001)