Wafer thickness control during backside grind

摘要: A method and apparatus for controlling the thickness of a semiconductor wafer during backside grinding process are disclosed. The present invention uses optical measurement to determine endpoint process. Preferred methods entail measuring light transmitted through or reflected by as function angle incidence wavelength. This information is then used, use curve fitting techniques formulas, wafer. Furthermore, may be used if wedging occurs and, does occur, provide leveling thinning such that surface can adjusted reduce eliminate wedging.