Detecting the endpoint of chem-mech polishing, and resulting semiconductor device
作者： Michael D. Rostoker
DOI:
关键词: Optoelectronics 、 Slurry 、 Semiconductor device 、 Layer (electronics) 、 Materials science 、 Electrical impedance 、 Wafer 、 Electrical conductor 、 Nanotechnology 、 Polishing
摘要: A contact structure is formed atop a semiconductor wafer at level whereat it desired to terminate polishing of layer overlying the structure. When becomes exposed slurry, an electrical characteristic, such as resistance or impedance, registered by measuring apparatus. In one embodiment, two more structures are wafer, vias through and filled, thereby providing conductive path from back side wafer. The apparatus probes filled on change in resistance/impedance indicates that have become during polishing, terminated. another embodiment invention, connected probe itself, Again,
lens.org 参考文章(19)
James E. Griffiths, Cyril J. Mogab, Eugene O. Degenkolb, Method for the optical monitoring of plasma discharge processing operations ,(1980)
Arthur H Lambert, Apparatus for trimming electrical resistors ,(1970)
R Walsh, Process for polishing thin elements ,(1972)
Gary G. Vair, Stanley T. Riddle, Apparatus and method for controlling magnetic head surface formation ,(1975)
Allan Lawrence Holmstrand, Douglas Joseph Hennenfent, Alan Glen Kracke, Method for calibrating a machining sensor ,(1983)
Michael A. Leach, Edward J. Nowak, Brian J. Machesney, Method of measuring changes in impedance of a variable impedance load by disposing an impedance connected coil within the air gap of a magnetic core ,(1990)
Nicholas F Pasch, Planarized process for forming vias in silicon wafers ,(1987)
Michael A. Leach, William J. Cote, Wafer flood polishing ,(1989)
Alan B. Smith, Electrical guide for tight tolerance machining ,(1989)
Gurtej S. Sandhu, Laurence D. Schultz, Trung T. Doan, Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers ,(1990)