Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layers
作者： U. H. Lee , D. Lee , H. G. Lee , S. K. Noh , J. Y. Leem
DOI: 10.1063/1.123628
关键词: Optoelectronics 、 Photoluminescence 、 Cladding (fiber optics) 、 Condensed matter physics 、 Blueshift 、 Materials science 、 Quantum dot 、 Excitation 、 Quantum tunnelling 、 Redshift 、 Transmission electron microscopy
摘要: Photoluminescence (PL) from InAs self-assembled quantum dots (QD) embedded in the AlAs matrix was strong and clean around 700 nm. PL efficiency remained quite high at room temperature compared to other QD systems GaAs cladding layers. Transmission electron microscope pictures structure showed a clear formation of relatively small coherently strained QD. The observed blueshift with accompanying broadening spectra increase excitation power is interpreted terms local carrier tunneling dense system. peak redshift very large, as much 228 meV. anomalous shift due activation-energy differences between different sizes.
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