作者: Dong Xu , Biao Wang , Yuanhua Lin , Lei Jiao , Hongming Yuan
DOI: 10.1016/J.PHYSB.2012.03.027
关键词: Diffraction 、 Microstructure 、 Dielectric 、 Materials science 、 Ceramic 、 Varistor 、 Scanning electron microscope 、 Doping 、 Analytical chemistry 、 Frequency dependence
摘要: Abstract In this work, the influence of Lu 2 O 3 doped on dielectric and electrical properties CaCu Ti 4 12 was reported. -doped CCTO prepared by a conventional solid state technique using CuO, TiO , CaCO as starting materials. The samples were studied X-ray diffraction (XRD) scanning electron microscopy (SEM); measurements measured in 10 Hz–10 7 Hz frequency range at room temperature; nonlinear behavior all measured. doping resulted an increase constant CCTO, but decreased stability dependence. Increasing concentrations decreasing coefficients.