作者: W. K. Chu , H. Kraütle , J. W. Mayer , H. Müller , M.‐A. Nicolet
DOI: 10.1063/1.1655546
关键词: Noble gas 、 Chemical physics 、 Silicide 、 Diffusion 、 Chemistry 、 Analytical chemistry 、 Physics and Astronomy (miscellaneous)
摘要: Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni 2 Si, VSi 2 , and TiSi 2 . Backscattering of MeV He has been used to …