Identification of the dominant diffusing species in silicide formation

作者: W. K. Chu , H. Kraütle , J. W. Mayer , H. Müller , M.‐A. Nicolet

DOI: 10.1063/1.1655546

关键词: Noble gasChemical physicsSilicideDiffusionChemistryAnalytical chemistryPhysics and Astronomy (miscellaneous)

摘要: Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni 2 Si, VSi 2 , and TiSi 2 . Backscattering of MeV He has been used to …

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