A thickness model for the TiSi2/TiN stack in the titanium salicide process module
作者： Jiunn-Yann Tsai , Pushkar Apte
DOI: 10.1016/0040-6090(96)80081-2
关键词: Tin 、 Salicide 、 Composite material 、 Ambient pressure 、 Transmission electron microscopy 、 Titanium 、 Design of experiments 、 Materials science 、 Sheet resistance 、 Stack (abstract data type)
摘要: A thickness model for the TiSi,/TiN stack in the titanium salicide process module … thickness, that enables accurate determination of the final TiSiz thickness and the reaction efficiency. …
harvard.edu
elsevier.com
sci-hub.se 参考文章(7)
Shyam P Murarka, Silicides for VLSI applications Elsevier. ,(1983)
Robert Beyers, Robert Sinclair, Metastable phase formation in titanium‐silicon thin films Journal of Applied Physics. ,vol. 57, pp. 5240- 5245 ,(1985) , 10.1063/1.335263
W. K. Chu, H. Kraütle, J. W. Mayer, H. Müller, M.‐A. Nicolet, K. N. Tu, Identification of the dominant diffusing species in silicide formation Applied Physics Letters. ,vol. 25, pp. 454- 457 ,(1974) , 10.1063/1.1655546
Subramanian S. Iyer, Chung‐Yu Ting, Peter M. Fryer, Ambient gas effects on the reaction of titanium with silicon Journal of The Electrochemical Society. ,vol. 132, pp. 2240- 2245 ,(1985) , 10.1149/1.2114328
Hiroshi Kotaki, Yoshiyuki Takegawa, Yukiko Mori, Katsunori Mitsuhashi, Junkou Takagi, Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)-Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors Japanese Journal of Applied Physics. ,vol. 33, pp. 532- 540 ,(1994) , 10.1143/JJAP.33.532
J. C. Hensel, R. T. Tung, J. M. Poate, F. C. Unterwald, Electrical transport properties of CoSi2 and NiSi2 thin films Applied Physics Letters. ,vol. 44, pp. 913- 915 ,(1984) , 10.1063/1.94932
G. E. Georgiou, H. Abiko, F. A. Baiocchi, N. T. Ha, S. Nakahara, Thermal Stability Limits of Thin TiSi2 Effect on Submicron Line Resistance and Shallow Junction Leakage Journal of The Electrochemical Society. ,vol. 141, pp. 1351- 1356 ,(1994) , 10.1149/1.2054922