Competing growth of titanium nitrides and silicides in Ti thin films processed in expanding microwave plasma: Morphology and microstructural properties

摘要: The diffusion of nitrogen into Ti silicide films allows the performance complementary metal oxide semiconductor (CMOS) components to be improved. In this work, thermochemical treatment is carried out in an expanding microwave plasma reactor using (Ar-33%N2-1%H2) gas mixtures. This process promotes chemical reactions on surface metals. film improved by reducing effect NHx and/or H species towards passive layers such as oxides which form a barrier during process. simultaneous formation nitrides and silicides at film-substrate interface, respectively gives rise two competing processes result growth nitride phase expense critical temperature 800°C. paper reports comprehensive analysis evolution TiSi2 TiN phases microstructural properties means X-ray diffraction, Raman spectroscopy, transmission electron microscopy selected area diffraction investigations. Square shaped crystals are identified top round TiSi2. induces catastrophic decrease intensity (040) line huge increase (220) reflection TiN. changes nanometric size bulk well migration free Si epitaxially grows interface have been evidenced very detailed investigations for first time. results related mechanism from reaction between nitrogen.The s...