Characterization of the interfaces formed during the silicidation process of Ti films on Si at low and high temperatures

摘要: The silicidation process of titanium on silicon shows three distinct ranges depending the treatment temperature. From 700°C up to 900°C, a stable and reproducible TiSi2 C54/Si structure is formed for all conditions. At lower temperatures not complete, several silicide phases appear during thermal treatment. On other hand, at high (T>900°C) provokes changes in TiSi2/Si structures. We have centred our interest these two extreme degree has been established by Rutherford backscattering grazing-incidence x-ray diffraction. It observed that TiSi C54 are only present film low temperatures. distribution determined transmission electron microscopy. high-resolution microscopy images indicate silicide/silicon interface very flat, but between different well defined. High-resolution I–V measurements used characterize 1050°C flat scale nanometres it rough micrometres. This roughening enough explain decreasing Schottky barrier height. © 1997 John Wiley & Sons, Ltd.