Investigations of transient phase formation in Ti/Si thin film reaction
作者： O. Chaix-Pluchery , B. Chenevier , I. Matko , J. P. Sénateur , F. La Via
DOI: 10.1063/1.1759395
关键词: Materials science 、 Silicide 、 Grain boundary 、 Thin film 、 Microstructure 、 Isothermal process 、 Amorphous solid 、 Analytical chemistry 、 Annealing (metallurgy) 、 Metallurgy 、 Grain boundary diffusion coefficient
摘要: The analysis of temperature and time dependence the Ti film microstructure evolution in Ti/Si thin films indicates Si diffusion occurs before any crystal phase is formed. Diffusion first grain boundaries then, within grains. Ti5Si3 has been identified as a transient forming C49 TiSi2 grows. only grows isothermal runs narrow range annealing temperatures (412–434 °C our study). It not observed which forms. mechanisms formation transformation into have found to be limited. Phases alloyed Ti, amorphous silicide, Ti5Si3, simultaneously observed. lifetime volume fraction initial metal layer transformed are naturally tightly dependent.
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sci-hub.se 参考文章(29)
Karen Maex, Marc van Rossum, Inspec, Properties of Metal Silicides ,(1995)
L. F. Mattheiss, J. C. Hensel, Electronic structure of TiSi 2 Physical Review B. ,vol. 39, pp. 7754- 7759 ,(1989) , 10.1103/PHYSREVB.39.7754
Shin‐ichi Ogawa, Takashi Kouzaki, Takehito Yoshida, Robert Sinclair, Interface microstructure of titanium thin‐film/silicon single‐crystal substrate correlated with electrical barrier heights Journal of Applied Physics. ,vol. 70, pp. 827- 832 ,(1991) , 10.1063/1.349641
B. Chenevier, O. Chaix-Pluchery, P. Gergaud, O. Thomas, F. La Via, Thermal expansion and stress development in the first stages of silicidation in Ti/Si thin films Journal of Applied Physics. ,vol. 94, pp. 7083- 7090 ,(2003) , 10.1063/1.1625092
S.-L. Zhang, C. Lavoie, C. Cabral, J. M. E. Harper, F. M. d’Heurle, J. Jordan-Sweet, In situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere Journal of Applied Physics. ,vol. 85, pp. 2617- 2626 ,(1999) , 10.1063/1.369626
Robert Beyers, Robert Sinclair, Metastable phase formation in titanium‐silicon thin films Journal of Applied Physics. ,vol. 57, pp. 5240- 5245 ,(1985) , 10.1063/1.335263
Karen Holloway, Robert Sinclair, High-resolution and in situ tem studies of annealing of Ti-Si multilayers Journal of The Less Common Metals. ,vol. 140, pp. 139- 148 ,(1988) , 10.1016/0022-5088(88)90376-1
M. H. Wang, L. J. Chen, Phase formation in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on (111)Si Journal of Applied Physics. ,vol. 71, pp. 5918- 5925 ,(1992) , 10.1063/1.350441
P. Gergaud, O. Thomas, B. Chenevier, Stresses arising from a solid state reaction between palladium films and Si(001) investigated by in situ combined x-ray diffraction and curvature measurements Journal of Applied Physics. ,vol. 94, pp. 1584- 1591 ,(2003) , 10.1063/1.1590059
Z. Ma, L. H. Allen, Kinetic mechanisms of theC49-to-C54 polymorphic transformation in titanium disilicide thin films: A microstructure-scaled nucleation-mode transition Physical Review B. ,vol. 49, pp. 13501- 13511 ,(1994) , 10.1103/PHYSREVB.49.13501