In situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere
作者： S.-L. Zhang , C. Lavoie , C. Cabral , J. M. E. Harper , F. M. d’Heurle
DOI: 10.1063/1.369626
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摘要: The formation of titanium silicides has been studied using simultaneous in situ x-ray diffraction with millisecond time resolution and sheet resistance measurements. effect a Mo interposed layer between Ti films Si substrate was investigated by varying the thickness interlayer from 0 (Ti/Si) to 1.8 nm (Ti/Mo/Si). kept 55 for all samples. Both isothermal annealing ramp helium were performed order study mechanism silicide formation. While C49 TiSi2 only disilicide found after Ti/Si at 650 °C 20 min, C54 readily formed presence Mo. not observed thick interlayer. Instead, there indication that C40 (Mo,Ti)Si2 formed. In addition, broad peaks, weak intensity, could be assigned Ti5Si4. However, Ti5Si4 alone did induce TiSi2. Even 20 °C increase annealing...
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