Cross-sectional transmission electron microscopy study of the influence of niobium on the formation of titanium silicide in small-feature contacts
作者： T. Jarmar , J. Seger , F. Ericson , U. Smith , S.-L. Zhang
DOI: 10.1063/1.1555270
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摘要: The influence of a Nb layer between Si and Ti on the formation TiSi2 in small-feature contacts substrate doping level has been studied using transmission electron microscopy combination with convergent-beam diffraction. For an As dose 2.5×1016 cm−2, mixture C49 partially agglomerated C54 TiSi2 grains was found some 5×5 μm2 contact windows, while only existed 0.7×0.7 μm2 windows. Agglomeration is shown to lead possible C49−C54 coexistence, as well erroneous interpretation C54 nucleation density. Decreasing 5×1015 cm−2 leads thicker layer, but does not have major phase small although large ones. In presence thin poly-Si, C40 (Ti,Nb)Si2 consistently all contacts, indicating that depend size at least down 0.5 μm2. Surprisingly, both sides th...
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A. Mouroux, T. Epicier, S.-L. Zhang, P. Pinard, Microscopic evidence of C40 and C54 in (Ti,Ta)Si 2 : Template mechanism Physical Review B. ,vol. 60, pp. 9165- 9168 ,(1999) , 10.1103/PHYSREVB.60.9165
S.-L. Zhang, C. Lavoie, C. Cabral, J. M. E. Harper, F. M. d’Heurle, J. Jordan-Sweet, In situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere Journal of Applied Physics. ,vol. 85, pp. 2617- 2626 ,(1999) , 10.1063/1.369626
Aliette Mouroux, Marylène Roux, Shi-Li Zhang, François M. d’Heurle, Cyril Cabral, Christian Lavoie, James M. E. Harper, Phase formation and resistivity in the ternary system Ti-Nb-Si Journal of Applied Physics. ,vol. 86, pp. 2323- 2329 ,(1999) , 10.1063/1.371049
S.L. Cheng, J.J. Jou, L.J. Chen, B.Y. Tsui, Formation of C54-TiSi2 enhanced by a thin interposing Mo layer on nitrogen ion implanted (001) Si Materials Chemistry and Physics. ,vol. 54, pp. 346- 350 ,(1998) , 10.1016/S0254-0584(98)00054-6
F La Via, S Privitera, M.G Grimaldi, E Rimini, S Quilici, F Meinardi, Determination of C54 nucleation site density in narrow stripes by sheet resistance measurements and m-Raman spectroscopy Microelectronic Engineering. ,vol. 50, pp. 139- 145 ,(1999) , 10.1016/S0167-9317(99)00274-9
J Åberg, S Persson, P-E Hellberg, S-L Zhang, U Smith, F Ericson, M Engström, W Kaplan, None, Electrical properties of the TiSi2-Si transition region in contacts : The influence of an interposed layer of Nb Journal of Applied Physics. ,vol. 90, pp. 2380- 2388 ,(2001) , 10.1063/1.1384486
S.-L. Zhang, F. M. d’Heurle, Influence of molybdenum on the formation of C54 TiSi2: Template phenomenon versus grain-size effect Applied Physics Letters. ,vol. 76, pp. 1831- 1833 ,(2000) , 10.1063/1.126180
F. La Via, V. Raineri, M. G. Grimaldi, Leo Miglio, M. Iannuzzi, F. Marabelli, S. Bocelli, S. Santucci, A. R. Phani, Role of the substrate in the C49-C54 transformation of TiSi2 Journal of Vacuum Science & Technology B. ,vol. 18, pp. 721- 728 ,(2000) , 10.1116/1.591266
Hyeongtag Jeon, C. A. Sukow, J. W. Honeycutt, G. A. Rozgonyi, R. J. Nemanich, Morphology and phase stability of TiSi2on Si Journal of Applied Physics. ,vol. 71, pp. 4269- 4276 ,(1992) , 10.1063/1.350808
A. Appelbaum, M. Eizenberg, Silicides formation for refractory metal alloys (Ta‐V and Ti‐V) on Si Journal of Applied Physics. ,vol. 56, pp. 2341- 2345 ,(1984) , 10.1063/1.334271