Phase formation and resistivity in the ternary system Ti-Nb-Si
作者： Aliette Mouroux , Marylène Roux , Shi-Li Zhang , François M. d’Heurle , Cyril Cabral
DOI: 10.1063/1.371049
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摘要: We present measurements of the pseudobinary phase diagram TiSi2–NbSi2 system. This disilicide system has recently become important because enhanced formation low resistivity C54 TiSi2 by addition Nb. The solubility limit Nb in at 1000 °C is found to lie between 10% and 16% metal site, Ti C40 NbSi2 76% 79.5% site. Adding increases unit cell volume a rate 0.035% per at. % (Ti,Nb)Si2 0.034% presence enhances improves its thermal stability. desirable increased 1.2 μΩ cm
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