Initial reactions and silicide formation of titanium on silicon studied by Raman spectroscopy

摘要: Raman spectroscopy is used to study the initial reactions and silicide formation of evaporated sputtered Ti on Si〈100〉 substrates. The annealings were performed in a vacuum rapid isothermal annealing system or UHV chamber. spectra obtained after various processing stages situ system. results indicate that Si interdiffusion precedes crystalline silicides. It suggested incorporated film, possibly leading disordered intermixing also agglomerates near grain boundaries. phase limited by nucleation, exhibits spectrum distinct from final presumed be TiSi2 which forms greater than 700 °C.