Phase formation during reactive molybdenum-silicide formation

摘要: Silicide formation due to thermal treatment of thin (5–10 nm) molybdenum films on single-crystal, polycrystalline, and hydrogenated amorphous silicon substrates in the temperature range 100 1000 °C was studied, with an emphasis initial interactions. The deposition, annealing, characterization using Raman scattering Auger electron spectroscopy carried out UHV order minimize effects contaminants. is used distinguish between tetragonal (t-MoSi2) hexagonal MoSi2 (h-MoSi2). spectrum bulk exhibits two prominent lines which are associated A1g (325 cm−1) Eg (440 modes. only silicide phases detected film experiments were t-MoSi2 h-MoSi2. While does not appear phase diagram, it first formed reactions at a 300 400 °C. nucleation h-MoSi2 same for Si〈100〉, Si〈111〉, Si. Indirect evidence disordered intermixing before found. Annealing approximately 800 causes transform from all substrates. Contaminants interfere also retard transformation t-MoSi2. For considered here, accompanied by islanding film. A lower interfacial energy has been proposed explain