作者: G. W. Lewthwaite
DOI: 10.1080/01418618208236920
关键词: Materials science 、 Dislocation 、 Crystallographic defect 、 Partial dislocations 、 Condensed matter physics 、 Crystallography
摘要: Abstract It is demonstrated that dislocations in tangles (defined as regions containing a higher than average dislocation density) may be considered to have an effective bias which less their intrinsic and can become the of surrounding network dislocations. The effect found for circumstances where either independent of, or increases with, local density. analysis allows previous conclusion Wolfer et al. (1972, 1974) (that tangled relatively neutral sinks irradiation-produced point defects) extended embrace excluded from considerations.