Scaling Issues In An 0.15/spl mu/m CMOS Technology With EKV3.0
作者： E. Kitonaki , A. Bazigos , M. Bucher , H. Puchner , S. Bhardwaj
DOI: 10.1109/MIXDES.2006.1706557
关键词: Drain current 、 CMOS 、 Electronic engineering 、 PMOS logic 、 MOSFET 、 Scaling 、 NMOS logic 、 Physics
摘要: Application of the EKV3.0 model to 0.15mum CMOS technology with single poly, and buried channel PMOS, is presented emphasis on scaling properties model. The illustrated for its fit NMOS PMOS drain current, transconductances output characteristics in weak, moderate strong inversion over a large temperature range. Scaling are fits versus length width. also compared measured capacitance-voltage characteristics. Furthermore, some comparisons BSIM3v3 same provided
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