An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs
作者： Antonios Bazigos , Matthias Bucher , Joachim Assenmacher , Stefan Decker , Wladyslaw Grabinski
关键词:
摘要: … extraction of the threshold voltage, in both linear operation and saturation, exploiting data … 1.2 V in saturation and 10 mV in linear mode. Markers represent threshold voltage extracted …
harvard.edu
sci-hub.se 参考文章(28)
Transistor level modeling for analog/RF IC design Transistor Level Modeling For Analog/Rf IC Design. pp. 67- 95 ,(2006) , 10.1007/1-4020-4556-5
Matthias Bucher, Analytical MOS transistor modelling for analog circuit simulation EPFL. ,(2000) , 10.5075/EPFL-THESIS-2114
Yannis Tsividis, Operation and modeling of the MOS transistor ,(1987)
E. Kitonaki, A. Bazigos, M. Bucher, H. Puchner, S. Bhardwaj, Y. Papananos, Scaling Issues In An 0.15/spl mu/m CMOS Technology With EKV3.0 international conference mixed design of integrated circuits and systems. pp. 151- 158 ,(2006) , 10.1109/MIXDES.2006.1706557
D.M. Binkley, M. Bucher, D. Foty, Design-oriented characterization of CMOS over the continuum of inversion level and channel length international conference on electronics circuits and systems. ,vol. 1, pp. 161- 164 ,(2000) , 10.1109/ICECS.2000.911508
L. Dobrescu, M. Petrov, D. Dobrescu, C. Ravariu, Threshold voltage extraction methods for MOS transistors international semiconductor conference. ,vol. 1, pp. 371- 374 ,(2000) , 10.1109/SMICND.2000.890257
Hon-Sum Wong, Marvin H. White, Thomas J. Krutsick, Richard V. Booth, Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's Solid-state Electronics. ,vol. 30, pp. 953- 968 ,(1987) , 10.1016/0038-1101(87)90132-8
Kazuo Terada, Katsuhiko Nishiyama, Kei-Ichi Hatanaka, Comparison of MOSFET-threshold-voltage extraction methods Solid-state Electronics. ,vol. 45, pp. 35- 40 ,(2001) , 10.1016/S0038-1101(00)00187-8
N. Arora, MOSFET Models for VLSI Circuit Simulation Microelectronics Journal. ,vol. 26, ,(1993) , 10.1016/0026-2692(95)90019-5
Christophe Lallement, Matthias Bucher, Christian Enz, Modelling and Characterization of Non-Uniform Substrate Doping Solid-state Electronics. ,vol. 41, pp. 1857- 1861 ,(1997) , 10.1016/S0038-1101(97)00137-8