CBED and FE Study of Thin Foil Relaxation in Cross-Section Samples of Si /Si 1-x Ge x and Si /Si 1-x Ge x /Si Heterostructures
作者： L Alexandre , G Jurczak , C Alfonso , W Saikly , C Grosjean
DOI: 10.1007/978-1-4020-8615-1_90
关键词: Condensed matter physics 、 Field (physics) 、 Diffraction 、 Stress (mechanics) 、 Materials science 、 Relaxation (NMR) 、 FOIL method 、 Metallurgy 、 Cross section (physics) 、 Residual stress 、 Heterojunction
摘要: In order to determine residual stress/strain fields in CMOS devices and validate tools used quantify the strain field, we first studied strains Si/Si1-xGex Si/Si1-xGex/Si TEM samples. Because of sample thinning for observations, elastic relaxation occurs modifies initial stress present bulk sample. Nevertheless, if main parameters which play a role on process can be determined, show that it is possible reproduce from FE diffraction simulations complex profile HOLZ lines observed experimental CBED patterns makes determination state.
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