Optimized FIB silicon samples suitable for lattice parameters measurements by convergent beam electron diffraction.

摘要: Abstract The aim of this paper is to check the effect artefacts introduced by focused ion beam (FIB) milling on strain measurement convergent electron diffraction (CBED). We show that optimized silicon FIB samples, can be performed with a sensitivity about 2.5 × 10−4 which very close theoretical one and we conclude preparation suitable for such measurements in microelectronic devices. To achieve this, first used CBED energy loss spectroscopy (EELS) provide procedure permitting an exact knowledge sample geometry, i.e. thickness both amorphous crystalline layers. This was order measure FIB-amorphized sidewall layer. It found if reduce layer down around 7 nm each side. Secondly different techniques (cleavage, Tripod™ FIB) permit surface damaged influences state sample. Finally, it does not introduce measurable pure but reduces appreciably quality patterns.