Electrodeposited AgInSe2 onto TiO2 films for semiconductor-sensitized solar cell application: The influence of electrodeposited time
作者： Lung-Chuan Chen , Yi-Ching Ho , Ru-Yuan Yang , Jean-Hong Chen , Chao-Ming Huang
DOI: 10.1016/J.APSUSC.2012.03.076
关键词: Energy conversion efficiency 、 Scanning electron microscope 、 Short circuit 、 Nanotechnology 、 Semiconductor 、 Tetragonal crystal system 、 Solar cell 、 Materials science 、 Open-circuit voltage 、 Analytical chemistry 、 Crystal
摘要: Abstract The influence of electrodeposited time (EDT) on Ag–In–Se species growth onto TiO2 films for possible semiconductor-sensitized solar cells (SSSCs) application was investigated. XRD analysis illustrated that the film predominantly comprised by AgInSe2 with tetragonal body structure and crystal size 6.05–7.50 nm when EDT in region 15–60 min at a bias −1.25 V (verse Hg/Hg2SO4 (MSE)). Scanning electron microscope (SEM) indicated high porosity AgInSe2/ITO morphology, permitting electrolytes freely percolated through these films. prepared exhibited n-type semiconductor behavior two band gap energies 1.27 1.80 eV. Photoelectrochemical measurement reflected open circuit potential varied little EDT, however, significant change associated short current fill factor (FF), causing AgInSe2/TiO2 45 min best to electricity conversion efficiency 0.26%. demonstrated longest lifetime according voltage decay analysis.
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