Preparation and optical properties of a SiO2 film containing In0.2Ga0.8As nanocrystals by radio-frequency magnetron co-sputtering

摘要: Abstract A SiO2 film containing In0.2Ga0.8As nanocrystals with size of about 3 nm was prepared by a radio frequency (r.f.) magnetron co-sputtering technique. The microstructure the characterized X-ray diffraction, Raman spectra and transmission electron microscopy. Linear optical absorption measured discussed an effective mass model. Non-linear non-linear refraction were investigated Z-scan technique using single Gaussian beam He–Ne laser (632.8 nm). An enhanced third-order coefficient refractive index achieved in composite to be 0.67 cm/W −2.7×10 −6 cm2/W, respectively.