Ultraviolet (340–390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix
作者： Jianzhong Shi , Kaigui Zhu , Qingqi Zheng , Lide Zhang , Ling Ye
DOI: 10.1063/1.118926
关键词:
摘要: InAs nanocrystals embedded in SiO2 matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of matrix. From optical absorption spectrum, edge exhibits very large blueshift 3.3 eV with respect to that bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show this phenomenon originates from radiative recombination quantum-confined electron-heavy hole excitons electron-split-off excitons.
scitation.org
aip.org
sci-hub.se 参考文章(11)
Yoshihiko Kanemitsu, Hiroshi Uto, Yasuaki Masumoto, Yoshihito Maeda, On the origin of visible photoluminescence in nanometer‐size Ge crystallites Applied Physics Letters. ,vol. 61, pp. 2187- 2189 ,(1992) , 10.1063/1.108290
Keiji Tsunetomo, Hiroyuki Nasu, Haruyuki Kitayama, Akira Kawabuchi, Yukio Osaka, Ken Takiyama, Quantum Size Effect of Semiconductor Microcrystallites Doped in SiO2-Glass Thin Films Prepared by Rf-Sputtering Japanese Journal of Applied Physics. ,vol. 28, pp. 1928- 1933 ,(1989) , 10.1143/JJAP.28.1928
M. G. Bawendi, W. L. Wilson, L. Rothberg, P. J. Carroll, T. M. Jedju, M. L. Steigerwald, L. E. Brus, Electronic structure and photoexcited-carrier dynamics in nanometer-size CdSe clusters. Physical Review Letters. ,vol. 65, pp. 1623- 1626 ,(1990) , 10.1103/PHYSREVLETT.65.1623
Yoshihito Maeda, Nobuo Tsukamoto, Yoshiaki Yazawa, Yoshihiko Kanemitsu, Yasuaki Masumoto, Visible photoluminescence of Ge microcrystals embedded in SiO2glassy matrices Applied Physics Letters. ,vol. 59, pp. 3168- 3170 ,(1991) , 10.1063/1.105773
Charles Kittel, Introduction to solid state physics ,(1953)
Wei‐Yu Wu, J. N. Schulman, T. Y. Hsu, Uzi Efron, Effect of size nonuniformity on the absorption spectrum of a semiconductor quantum dot system Applied Physics Letters. ,vol. 51, pp. 710- 712 ,(1987) , 10.1063/1.98896
S. Fafard, Z. Wasilewski, J. McCaffrey, S. Raymond, S. Charbonneau, InAs self‐assembled quantum dots on InP by molecular beam epitaxy Applied Physics Letters. ,vol. 68, pp. 991- 993 ,(1996) , 10.1063/1.116122
Achyut Kumar Dutta, Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition Applied Physics Letters. ,vol. 68, pp. 1189- 1191 ,(1996) , 10.1063/1.115964
R. Steffen, Th. Koch, J. Oshinowo, F. Faller, A. Forchel, Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low‐voltage electron beam lithography Applied Physics Letters. ,vol. 68, pp. 223- 225 ,(1996) , 10.1063/1.116467
H. Giessen, B. Fluegel, G. Mohs, N. Peyghambarian, J. R. Sprague, O. I. Micic, A. J. Nozik, Observation of the quantum confined ground state in InP quantum dots at 300 K Applied Physics Letters. ,vol. 68, pp. 304- 306 ,(1996) , 10.1063/1.116067