Nonlinear optical absorption of InAs nanocrystals embedded in SiO2 thin films
作者： J. Shi , K. Zhu , L. Zhang
DOI: 10.1016/S0038-1098(99)00118-0
关键词: Z-scan technique 、 Thin film 、 Optoelectronics 、 Materials science 、 Gaussian beam 、 Absorption spectroscopy 、 Extended X-ray absorption fine structure 、 Analytical chemistry 、 Laser 、 Two-photon absorption 、 Attenuation coefficient
摘要: Abstract Nonlinear optical absorption of InAs nanocrystals embedded in SiO2, films prepared by radio-frequency magnetron cosputtering was studied Z-scan technique using a single Gaussian beam He–Ne laser (633 nm). Both two-photon and saturation were observed. The enhanced third-order nonlinear coefficients obtained the composite film. Our results indicate that type magnitude coefficient are related to average size nanocrystals.
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