Method for etching groove through common polycrystal etching device
作者： Wang Youwei
DOI:
关键词: Etching (microfabrication) 、 Photoresist 、 Groove (engineering) 、 Hard mask 、 Composite material 、 Gate oxide 、 Materials science 、 Layer (electronics)
摘要: The invention relates to a method for etching groove through common polycrystal device. comprises the steps of (1) performing sacrificial oxidation and depositing hard mask; (2) photoetching (3) removing photoresist; (4) mask layer; (5) thermally repairing, developing layer, cleaning; (7) gate oxide. According method, step layer is added after sued repairing damage generated in etching; performed smoothening top bottom appearances groove, thus thickness uniformity subsequent oxide can be improved. With adoption with good appearance, smooth sidewall non-edge part etched device; quality further ensured; stability product greatly
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