STI (shallow trench isolation) manufacturing process, trench etching method and photoresist processing method

摘要: Disclosed are an STI manufacturing process, a trench etching method and photoresist processing method. The process includes: treating by HBr to enhance hardness of the photoresist, forming polymer film on surface photoresist; removing strong corrosive containing C-F groups or S-F groups; form flat-bottom pattern in semiconductor substrate using as mask. treatment hardens formed is removed then, accordingly effect subsequent avoided, isolation trenches have good appearance with no sharp corners. Voids generated filling silicon dioxide few none, leakage reduced satisfactory can be achieved.