作者: Yuichi Nakao , Takashi Nakamura , Akira Kamisawa , Hidemi Takasu
DOI: 10.1080/10584589508019351
关键词: Polarization (electrochemistry) 、 Materials science 、 Electrode 、 Ferroelectricity 、 Ferroelectric thin films 、 Sputter deposition 、 Voltage 、 Capacitor 、 Thin film 、 Optoelectronics
摘要: Abstract In this paper we describe an experimental study on ferroelectric non-volatile memory. The test devices using a MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure were developed for 1-Tr-type NDRO (non-destructive readout) PZT (Lead-zirconate-titanate) and PT (lead-titanate) thin films deposited various bottom electrodes by solgel method. As electrodes, Pt, Pt/Ti, Pt/Ti/Ta Pt/IrO2 RF magnetron sputtering. We found out that variation in the caused drastic changes C-V characteristics fatigue of capacitors. I-V Pt/PZT/ Pt/SiO2/p-Si FET showed hysteresis loop direction corresponded to polarization film. A 2.7 V memory window was achieved 6 programming voltage. no after 1012 switching cycles.