Fabrication of MFIS-FETs using PLZT/STO/Si(100) structures
作者： E. Tokumitsu , R. Nakamura , H. Ishiwara
关键词:
摘要: … overcome these difficulties, we use a SrTiO,(STO) buffer layer to grow the PLZT films OR Si … of STO(70 nm)/Si structures without a ferroelectric PLZT layer as shown in Fig. 1. STO layers …
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