A 2-8GHz balanced bipolar transistor amplifier
作者： You-sun Wu , Han-Tzong Yuan , W. Wisseman
DOI: 10.1109/ISSCC.1979.1155898
关键词: Amplifier 、 Common source 、 Common emitter 、 FET amplifier 、 Heterostructure-emitter bipolar transistor 、 Physics 、 RF power amplifier 、 Electrical engineering 、 Direct-coupled amplifier 、 Common base
摘要: A two-octave (2-8GHz) balanced bipolar transistor amplifier with 5dB gain and less than 1dB in band ripple will be described. Amplifier is operated a linear, classA, common emitter mode requires but one power supply for bias.
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