An Integrated 4-GHz Balanced Transistor Amplifier
作者： T.E. Saunders , P.D. Stark
DOI: 10.1109/JSSC.1967.1049774
关键词: Amplifier 、 Electrical engineering 、 L band 、 Electronic component 、 Electronic engineering 、 Transistor 、 Stripline 、 Circuit design 、 Noise figure 、 Materials science 、 Microwave transmission
摘要: This paper presents performance data and design information on a broadband 4-GHz balanced transistor amplifier being developed for possible use in microwave radio relay systems. The stripline circuitry passive components are integrally fabricated 1.5-inch-square alumina substrate using thin-film technology. A comprehensive description is presented of the circuit design, mechanical fabrication techniques, long-term stability tests. Three-stage amplifiers give 15 dB gain at 4 GHz with 3-dB bandwidth 1000 MHz. Input output VSWR'S were below 1.05 noise figure 7 dB. mean time to failure more than 10/sup 6/ hours has been indicated complete three-stage device by obtained accelerated component aging
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