Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation
作者： Sang Han Park , Jimin Chae , Kwang Sik Jeong , Tae-Hyeon Kim , Hyejin Choi
DOI: 10.1021/ACS.NANOLETT.5B00553
关键词: Fermi level 、 Topological order 、 Transmittance 、 Scattering 、 Topological insulator 、 Density functional theory 、 Condensed matter physics 、 Spectroscopy 、 Materials science 、 Surface (mathematics)
摘要: For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show tensile decreases bulk carrier density while accentuating transport of surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy functional theory calculations. The induced confirmed by transmittance X-ray scattering measurements. results the possibility reversible device structural deformation.
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