Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111)

摘要: Abstract Epitaxial Bi 2 Se 3 films were grown by molecular beam epitaxy on Si(111)-Bi( × )R30° at temperatures between 200 and 250 °C. The surface bulk morphology was characterized high resolution low energy electron diffraction, X-ray atomic force microscopy for various film thicknesses 6 90 nm. are atomically smooth without small angle mosaics or rotational domains. precise determination of lattice parameter reveals that higher temperature exhibit a smaller value the vertical parameter. presence random stacking faults in is reflected parabolic increase width diffraction peaks diffraction.