作者: Yasunori Kubo , Yoshiharu Sakurai , Yoshikazu Tanaka , Tetsuya Nakamura , Hiroshi Kawata
DOI: 10.1143/JPSJ.66.2777
关键词: Electron 、 Electronic band structure 、 Synchrotron radiation 、 Wave function 、 Physics 、 Optics 、 Compton scattering 、 Diamond 、 Silicon 、 Computational physics 、 Local-density approximation
摘要: The full-potential linearized augmented-plane-wave (FLAPW) method is employed to find out effects of introducing the self-interaction correction (SIC) on band structures, electron wavefunctions and Compton profiles both diamond silicon. To examine computed results high-resolution silicon along , directions are measured. In case silicon, it found that theoretical with SIC in better agreement measured when their first derivatives compared. Although much larger diamond, prediction be tested by future profile measurements.