Method of forming an interlayer insulating film having a siloxane skeleton

作者: Nobuo Aoi

DOI:

关键词: SiloxanePhenyl groupEthyl groupMaterials scienceMethyl groupSiliconPolymer chemistry

摘要: In a method of forming an interlayer insulating film by plasma CVD, organic siloxane compound including one or more silicon atoms each having at least three units represented general formula, —O—Si(R 1 R 2 )—OR 3 (wherein and are the same as different from other methyl group, ethyl group propyl is phenyl group) used raw material.

参考文章(7)
Takeshi Asano, Hideo Nakagawa, Masaru Sasago, Fujio Yagihashi, Motoaki Iwabuchi, Tsutomu Ogihara, Yoshitaka Hamada, Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device ,(2004)
Po-Tsun Liu, Ting-Chang Chang, Hsing Su, Yi-Shian Mor, Ya-Liang Yang, Henry Chung, Jan Hou, Simon-M. Sze, Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer Journal of The Electrochemical Society. ,vol. 148, ,(2001) , 10.1149/1.1342184
Fujio Yagihashi, Masaru Sasago, Hideo Nakagawa, 不二夫 八木橋, 秀夫 中川, Tsutomu Ogihara, 勤 荻原, 勝 笹子, Porous film, composition and method for forming the same, interlayer insulating film and semiconductor device ,(2003)
佳紀 森貞, Nobuo Matsuki, Yoshinori Morisada, 信雄 松木, 雄一 内藤, Yuichi Naito, Aya Matsunoshita, 綾 松野下, Silicone polymer insulation film on semiconductor substrate, and method for formation thereof ,(1999)
Fujio Yagihashi, Motoaki Iwabuchi, Takeshi Asano, Yoshitaka Hamada, Masaru Sasago, Hideo Nakagawa, 吉隆 濱田, 元亮 岩淵, 不二夫 八木橋, 秀夫 中川, Tsutomu Ogihara, 健 浅野, 勤 荻原, 勝 笹子, Composition for forming porous film, porous film and its manufacturing process, interlayer dielectrics and semiconductor device ,(2002)