Porous film, composition and method for forming the same, interlayer insulating film and semiconductor device

摘要: PROBLEM TO BE SOLVED: To provide a composition for forming porous film which forms having dielectric constant of ≤2.0 and high physical strengths through practical step at low cost, method the film, an interlayer insulating formed by using same, high-performance, high-reliability semiconductor device wherein is installed. SOLUTION: The essentially comprises (A) 100 pts.wt. curable silicone resin number average molecular weight ≥100, (B) 5-50 micelle-forming surfactant (C) 0.01-10 compound generates acid pyrolysis. excellent in shelf stability can be used to form smooth homogeneous, has large mechanical optimally as when manufacturing device. COPYRIGHT: (C)2005,JPO&NCIPI