Precursor composition for porous thin film, method for preparation of the precursor composition, porous thin film, method for preparation of the porous thin film, and semiconductor device

摘要: Disclosed is a precursor composition comprising: compound selected from represented by the formula: Si(OR 1 ) 4 and formula R (Si) (OR 2 4-a (in formulas represents monovalent organic group; hydrogen atom, fluorine atom or an integer ranging to 3, provided that R, may be same different one another) thermally degradable compound; element having catalyst activity; urea; like. A porous thin film produced irradiated with ultraviolet ray, then subjected gas-phase reaction hydrophobic compound. thus prepared can used for manufacture of semiconductor device.