Method of forming interlayer insulating film, precursor solution for forming of interlayer insulating film, cvd material for forming of interlayer insulating film and raw material for production of siloxane oligomer
作者： Nobuo Aoi
DOI:
关键词: Methyl group 、 Phenyl group 、 Organic chemistry 、 Materials science 、 Chemical engineering 、 Raw material 、 Ethyl group 、 Silicon 、 Dielectric 、 Oligomer 、 Siloxane
摘要: PROBLEM TO BE SOLVED: To provide a method of forming an interlayer insulation film which has superior mechanical strength and low dielectric constant. SOLUTION: In the by plasma CVD, organic siloxane compound including one or more silicon atoms, each at least three units expressed general expression -O-Si(R 1 R 2 )-OR 3 , where are same different kinds either methyl groups, ethyl propyl groups is kind as from group, phenyl used material. COPYRIGHT: (C)2007,JPO&INPIT
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