Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same
作者： Ei Yano , Yoshihiro Nakata
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摘要: The silica film forming material of the present invention comprises a silicone polymer which comprises, as part its structure, CHx, an Si—O—Si bond, Si—CH 3 bond and Si—CHx- where x represents integer 0 to 2.
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