Silicon-based composition, low dielectric constant film, semiconductor device, and method for producing low dielectric constant film
作者： Iwao Sugiura , Yoshihiro Nakata , Katsumi Suzuki , Ei Yano
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摘要: A composition comprising a siloxane resin, silicon compound substantially consisting of silicon, carbon and hydrogen, wherein the number ratio to atoms forming an —X— bond (wherein X is (C)m (where m integer in range from 1 3), or substituted unsubstituted aromatic group with 9 less atoms) main chain one molecule 2:1 12:1, solvent, subjected heat treatment form low dielectric constant film. Accordingly, film having excellent resistance against chemicals moisture provided. semiconductor integrated circuit fast response can be produced by using
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