Process to improve transistor drive current through the use of strain
作者： Dennis D. Buss
DOI:
关键词: Current (fluid) 、 PMOS logic 、 Materials science 、 Silicon 、 Communication channel 、 Transistor 、 Process (computing) 、 Electrical engineering 、 Substrate (electronics) 、 Optoelectronics 、 Layer (electronics)
摘要: The present invention provides, in one embodiment, a P-type Metal Oxide Semiconductor (PMOS) device ( 100 ). ) comprises tensile-strained silicon layer 105 located on silicon-germanium substrate 110 and source/drain structures 135, 140 or the PMOS further includes channel region 130 between within has compressive stress 145 direction parallel to an intended current flow 125 through Other embodiments of include method manufacturing 200 MOS 300
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