Systems and methods for thermal isolation of a silicon structure
作者： Joel A. Kubby
DOI:
关键词: Highly selective 、 Selectivity 、 Single crystal silicon 、 Materials science 、 Insulation layer 、 Layer (electronics) 、 Crystallography 、 Silicon 、 Substrate (electronics) 、 Thermal isolation 、 Composite material
摘要: A silicon structure is at least partially thermally isolated from a substrate (210) by gap (232) formed in an insulation layer (230) disposed between the and (220) which formed. In embodiments, made of single crystal silicon. such that surface under maintained substantially unetched. other without affecting underlying (232). particular, may be removing portion with etch does not affect gap. embodiments highly selective material (210). The selectivity about 20:1 or greater.
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