作者: Won-Il Park , Gyu-Chul Yi
DOI:
关键词: Optoelectronics 、 Semiconductor 、 Materials science 、 Luminescence 、 Field-effect transistor 、 Epitaxy 、 Heterojunction 、 Thin film 、 Nanorod 、 Photodetector
摘要: A heterojunction structure composed of a p-type semiconductor thin film and n-type ZnO-based nanorods epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling electrons through the nano-sized junction use ZnO having exciton energy as light emitting material, thus it can be advantageously used in nano-devices such LED, field effect transistor, photodetector, sensor, etc.