P-n heterojunction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same

作者: Won-Il Park , Gyu-Chul Yi

DOI:

关键词: OptoelectronicsSemiconductorMaterials scienceLuminescenceField-effect transistorEpitaxyHeterojunctionThin filmNanorodPhotodetector

摘要: A heterojunction structure composed of a p-type semiconductor thin film and n-type ZnO-based nanorods epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling electrons through the nano-sized junction use ZnO having exciton energy as light emitting material, thus it can be advantageously used in nano-devices such LED, field effect transistor, photodetector, sensor, etc.

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