作者: Amit Gahoi , Stefan Wagner , Andreas Bablich , Satender Kataria , Vikram Passi
DOI: 10.1016/J.SSE.2016.07.008
关键词: Contact resistance 、 Graphene foam 、 Materials science 、 Graphene nanoribbons 、 Electrical contacts 、 Graphene 、 Annealing (metallurgy) 、 Palladium 、 Composite material 、 Platinum 、 Nanotechnology
摘要: Abstract In this study, the contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying channel widths and separation between contacts have been fabricated electrically characterized in ambient air vacuum condition. Electrical are made five metals: gold, nickel, nickel/gold, palladium platinum/gold. The lowest value 92 Ω μm observed for extracted from back-gated devices at an applied back-gate bias −40 V. Measurements carried out under show larger values when compared measurements conditions. Post processing annealing 450 °C 1 h argon-95%/hydrogen-5% atmosphere results lowering which attributed enhancement adhesion metal graphene. presented work provide overview potential engineering high performance graphene-based electronic devices.