Performance enhancement of junctionless nanowire FET with laterally graded channel doping and high-K spacers
作者： Sanjeev Kumar Sharma , Balwinder Raj , Mamta Khosla
DOI: 10.1109/GCCE.2015.7398608
关键词: Gate oxide 、 Leakage (electronics) 、 Computer science 、 Ion 、 Nanowire 、 Performance enhancement 、 Optoelectronics 、 Doping 、 High-κ dielectric 、 Field-effect transistor
摘要: We propose the use of laterally graded channel doping and High-K Spacers positioned on both sides of gate oxide to improve the Performance and thereby, the scalability of …
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