Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications

摘要: In this paper, we propose a laterally graded-channel pseudo-junctionless (GPJL) MOSFET for analog/RF applications. We examine the dynamical performance of GPJL and compare it with common junctionless (JL) architecture using 2-D full-band electron Monte Carlo simulator (MC) quantum correction. Our results indicate that outperforms conventional JL MOSFET, yielding higher values drain current (I ds), transconductance (g m), cutoff frequency (f t). Further, emerging electric field velocity distributions, as consequence channel engineering introduced by result in lower output conductance ds) early voltage (V ea). The preeminence transistor over is further illustrated showing improvements on intrinsic gain (A vo) subthreshold regime, to high 61 %. These our proposed yields improvement metrics compared MOSFETs.