Monte Carlo simulation of nanoelectronic devices
作者： F. Gamiz , A. Godoy , L. Donetti , C. Sampedro , J. B. Roldan
DOI: 10.1007/S10825-009-0295-X
关键词: Nanoelectronics 、 Transistor 、 Monte Carlo method 、 Electron mobility 、 MOSFET 、 Materials science 、 Quantum optics 、 Quantum wire 、 Computer simulation 、 Optoelectronics
摘要: The Monte Carlo simulation method is used to analyze the behavior of electron and hole mobility in different nanoelectronic devices including double gate transistors FinFETs. impact technological parameters on carrier broadly discussed, its physically explained. Our main goal show how multiple compares that single study approaches improve performance these devices. Simulations ultrashort channel taking into account quantum effects are also shown.
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